IBA International Business Advisors, Inc.

5008 SW 17^th Ave., Cape Coral, FL 33914 USA Tel: (239) 542-5138 e-mail: WHeierli@aol.com

LASER DIODES IBA200S-850

IBA200S-850 Series of devices are AIGaAs/GaAs quantum well structure fabricated MOCVD technique in 850 nm spectral range. These High Power Laser Diodes are single mode emitters with narrow (0.1nm min) spectral width. Low threshold current and high slope efficiency contribute to low operating currents, enhancing reliability. IBA200S-850 light source is a CW injection semiconductor laser with optional built-in monitor photodiode to stabilize output power. The laser light source is required for the application in various optoelectronic systems.

Optical and electrical characteristics (T = 25 ° C)

Characteristics		Symbol	Min	Typ	Max	Unit
Optical Output Power		Pout			200	mW
Wavelength		l	845	850	855	nm
Emitting Area		WxH			4x1.5	m m x m m
Threshold Current		I_th		60	100	mA
Forward Current		I_f			350	mA
Forward Voltage		U_f			2.3	V
Beam	perpendicular	q		23		deg.
Divergence	Parallel	q		5		deg.
Static Alignment		D a ï ê x, D a ^			< ± 3	deg.
Positional Accuracy		D X,D Y,D Z			± 100	m m
Spectral Width(FWHM)		D l	0.1	1.5	3	nm
Mode Structure				Single Mode
Slope Efficiency		dPo/dIop		0.9		mW/mA
Monitoring Output Current		Im	0.05		2	mA

Additional:

- wavelength drift under temperature change - not more than 0.3nm/° C;

- operating temperature range - -20 ° C...+40 ° C;

- monitor PD operating voltage - (5± 0.5)V

Mounting base:

Connection (optional, TBD)

1 LD cathode

2 LD anode and

2 PD cathode ("+"supply)(case)

3 PD anode ("-"supply)