MOCVD AlGaAs Quantum Well High Power Laser Diodes
Model	Wavelength, nm	Output power, mW	Operating current, mA	Operating voltage, V	Threshold current, mA	Beam divergence, deg	Spectral width (FWHM), nm	Stripe width, µm
IBA100M-808	805..811	100	300	2.2	180	8 x 30	3	100
IBA250M-808	805..811	250	450	2.0	180	12 x 35	3	80
IBA500M-808	805..811	500	900	2.0	230	12 x 35	3	120
IBA1000M-808-D	806..809	1000	1500	2.4	270	8 x 35	3	120
IBA500M-808-K	806…810	500	800	1.9	300	10 x 35	2	100
IBA1000M-808-K	806…810	1000	1250	2.0	300	10 x 35	2	100
IBA1500M-808-K	806…810	1500	1800	2.0	400	10 x 35	2	100
IBA200M-830	820..840	200	450	2.0	180	12 x 35	3	30
IBA250M-850	830..870	250	450	2.0	150	6 x 30	3	50
IBA1000M-850	840..860	1000	1500	1.95	300	10 x 30	3	100
IBA500M-980	960..990	500	800	1.8	150	12 x 32	10	50
IBA1000M-980	960..990	1000	1500	1.9	200	12 x 32	10	100
IBA1500M-980	960..990	1500	1900	2.0	200	12 x 32	10	100
IBA500M-1020	990..1040	500	900	1.9	200	12 x 32	10	100
IBA1000M-1020-A	1010..1050	1000	1500	1.8	300	10 x 32	10	100

Models with "K" index are based on AlGaInP/GaAs Heterostructure